STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces
Identifieur interne : 012939 ( Main/Repository ); précédent : 012938; suivant : 012940STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces
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Abstract
The first study of the electrical properties of nanometer-size InAs particles is presented. InAs quantum dots (Q-InAs) deposited as films onto Pt and Au electrodes are examined using scanning tunneling microscopy (STM), tunneling spectroscopy (TS), and macroscopic conductivity measurements. In addition, single Q-InAs particles adsorbed on Au-covered mica substrates are examined by STM. The following results are reported in this study: (1) The size distribution of Q-InAs obtained from cross sections of STM images agreed with previous XRD and TEM size measurements, and the measured size was well below the exciton diameter estimated for InAs. (2) The TS I-V curves for Q-InAs films on Au show a larger zero-current region than that obtained for sulfide-passivated, bulk single crystal p-InAs; consistent with the magnitude of strong confinement predicted for particles of this size by the effective mass model. (3) Macroscopic I-V measurements acquired under vacuum for Q-InAs films deposited onto Au interdigitated array electrodes show the absence of an effect of charge transport at either the Q-InAs/Q-InAs or the Q-InAs/Au interfaces on TS energy gap measurements. These results supported our conclusion that the zero-current region in the TS spectra of Q-InAs is reflective of a wider HOMO-LUMO gap in the quantum dots. These I-V plots also showed that the conductivity of the Q-films is only 2 orders of magnitude lower than bulk InAs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces</title><author><name sortKey="Halaoui, L I" uniqKey="Halaoui L">L. I. Halaoui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, American University of Beirut</s1><s2>Beirut, 110236</s2><s3>LBN</s3><sZ>1 aut.</sZ></inist:fA14><country>Liban</country><wicri:noRegion>Beirut, 110236</wicri:noRegion></affiliation></author><author><name sortKey="Wells, R L" uniqKey="Wells R">R. L. Wells</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemistry, P. M. Gross Chemical Laboratory, Duke University</s1><s2>Durham, North Carolina, 27708</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, North Carolina, 27708</wicri:noRegion></affiliation></author><author><name sortKey="Coury, L A Jr" uniqKey="Coury L">L. A. Jr Coury</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemistry, P. M. Gross Chemical Laboratory, Duke University</s1><s2>Durham, North Carolina, 27708</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Durham, North Carolina, 27708</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0423615</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 00-0423615 INIST</idno><idno type="RBID">Pascal:00-0423615</idno><idno type="wicri:Area/Main/Corpus">012673</idno><idno type="wicri:Area/Main/Repository">012939</idno></publicationStmt><seriesStmt><idno type="ISSN">0897-4756</idno><title level="j" type="abbreviated">Chem. mater.</title><title level="j" type="main">Chemistry of materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>IV characteristic</term><term>Indium arsenides</term><term>Nanostructures</term><term>Quantum dots</term><term>STM</term><term>Scanning tunneling spectroscopy</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>STM</term><term>Spectrométrie tunnel balayage</term><term>Point quantique</term><term>Matériau semiconducteur</term><term>Indium arséniure</term><term>Nanostructure</term><term>Caractéristique courant tension</term><term>7361T</term><term>7361E</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The first study of the electrical properties of nanometer-size InAs particles is presented. InAs quantum dots (Q-InAs) deposited as films onto Pt and Au electrodes are examined using scanning tunneling microscopy (STM), tunneling spectroscopy (TS), and macroscopic conductivity measurements. In addition, single Q-InAs particles adsorbed on Au-covered mica substrates are examined by STM. The following results are reported in this study: (1) The size distribution of Q-InAs obtained from cross sections of STM images agreed with previous XRD and TEM size measurements, and the measured size was well below the exciton diameter estimated for InAs. (2) The TS I-V curves for Q-InAs films on Au show a larger zero-current region than that obtained for sulfide-passivated, bulk single crystal p-InAs; consistent with the magnitude of strong confinement predicted for particles of this size by the effective mass model. (3) Macroscopic I-V measurements acquired under vacuum for Q-InAs films deposited onto Au interdigitated array electrodes show the absence of an effect of charge transport at either the Q-InAs/Q-InAs or the Q-InAs/Au interfaces on TS energy gap measurements. These results supported our conclusion that the zero-current region in the TS spectra of Q-InAs is reflective of a wider HOMO-LUMO gap in the quantum dots. These I-V plots also showed that the conductivity of the Q-films is only 2 orders of magnitude lower than bulk InAs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0897-4756</s0></fA01><fA03 i2="1"><s0>Chem. mater.</s0></fA03><fA05><s2>12</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>STM and TS study of InAs quantum dots immobilized on Au and Pt surfaces</s1></fA08><fA11 i1="01" i2="1"><s1>HALAOUI (L. I.)</s1></fA11><fA11 i1="02" i2="1"><s1>WELLS (R. L.)</s1></fA11><fA11 i1="03" i2="1"><s1>COURY (L. A. JR)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, American University of Beirut</s1><s2>Beirut, 110236</s2><s3>LBN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemistry, P. M. Gross Chemical Laboratory, Duke University</s1><s2>Durham, North Carolina, 27708</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>1205-1216</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21957</s2><s5>354000082431400060</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>59 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0423615</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Chemistry of materials</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The first study of the electrical properties of nanometer-size InAs particles is presented. InAs quantum dots (Q-InAs) deposited as films onto Pt and Au electrodes are examined using scanning tunneling microscopy (STM), tunneling spectroscopy (TS), and macroscopic conductivity measurements. In addition, single Q-InAs particles adsorbed on Au-covered mica substrates are examined by STM. The following results are reported in this study: (1) The size distribution of Q-InAs obtained from cross sections of STM images agreed with previous XRD and TEM size measurements, and the measured size was well below the exciton diameter estimated for InAs. (2) The TS I-V curves for Q-InAs films on Au show a larger zero-current region than that obtained for sulfide-passivated, bulk single crystal p-InAs; consistent with the magnitude of strong confinement predicted for particles of this size by the effective mass model. (3) Macroscopic I-V measurements acquired under vacuum for Q-InAs films deposited onto Au interdigitated array electrodes show the absence of an effect of charge transport at either the Q-InAs/Q-InAs or the Q-InAs/Au interfaces on TS energy gap measurements. These results supported our conclusion that the zero-current region in the TS spectra of Q-InAs is reflective of a wider HOMO-LUMO gap in the quantum dots. These I-V plots also showed that the conductivity of the Q-films is only 2 orders of magnitude lower than bulk InAs.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61T</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C61E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>STM</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>STM</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Spectrométrie tunnel balayage</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Scanning tunneling spectroscopy</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Point quantique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Nanostructure</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nanostructures</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>IV characteristic</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>7361T</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fN21><s1>283</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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